january 2012 doc id 18268 rev 2 1/7 7 tpdvxx25 25 a high voltage triacs features on-state current (i t(rms) ): 25 a max. blocking voltage (v drm /v rrm ): 1200 v gate current (i gt ): 150 ma commutation @ 10 v/s: up to 88 a/ms noise immunity: 2 kv/s insulated package: ? 2,500 v rms (ul recognized: e81734). description the tpdvxx25 series use high performance alternistor technology. featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). a2 a1 g top3 insulated a2 a1 g table 1. device summary parameter tpdv825rg tpdv1025rg TPDV1225rg blocking voltage v drm /v rrm 800 v 1000 v 1200 v on-state current i t(rms) 25 a gate current i gt 150 ma www.st.com
characteristics tpdvxx25 2/7 doc id 18268 rev 2 1 characteristics table 2. absolute maximum ratings (limiting values) symbol parameter value unit i t(rms) on-state rms current (180 conduction angle) t c = 85 c 25 a i tsm non repetitive surge peak on-state current t p = 2.5 ms t j = 25 c 390 a t p = 8.3 ms 250 t p = 10 ms 230 i 2 ti 2 t value for fusing t p = 10 ms t j = 25 c 265 a 2 s di/dt critical rate of rise of on-state current i g = 500 ma, di g /dt = 1 a/s f = 50 hz 100 a/s v drm v rrm repetitive peak off-state voltage tpdv825 t j = 125 c 800 v tpdv1025 1000 TPDV1225 1200 t stg t j storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c v ins(rms) (1) insulation rms voltage 2500 v 1. a1, a2, gate terminals to case for 1 minute table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant value unit i gt v d = 12 v dc, r l = 33 i - ii - iii max. 150 ma v gt max. 1.5 v v gd v d = v drm r l = 3.3 k t j = 125 c i - ii - iii min. 0.2 v t gt v d = v drm i g = 500 ma di g /dt = 3 a/s i - ii - iii typ. 2.5 s i h (1) i t = 500 ma gate open typ. 50 ma i l i g = 1.2 x i gt i - iii typ. 100 ma ii 200 dv/dt linear slope up to: v d = 67% v drm gate open t j = 125 c min. 2000 v/s v tm (1) i tm = 35 a t p = 380 s max. 1.8 v v to (1) threshold voltage t j = 125 c max. 1.1 v r d (1) dynamic resistance t j = 125 c max. 19 m i drm i rrm v drm = v rrm t j = 25 c max. 20 a t j = 125 c 8 ma (di/dt)c (1) (dv/dt)c = 200 v/s t j = 125 c min. 20 a/ms (dv/dt)c = 10 v/s 88 1. for either polarity of electrode a 2 voltage with reference to electrode a 1 .
tpdvxx25 characteristics doc id 18268 rev 2 3/7 table 4. gate characteristics (maximum values) symbol parameter value unit p g(av) average gate power dissipation 1 w p gm peak gate power dissipation t p = 20 s 40 w i gm peak gate current t p = 20 s 8 a v gm peak positive gate voltage t p = 20 s 16 v table 5. thermal resistance symbol parameter value unit r th(j-a) junction to ambient 50 c/w r th(j-c) dc junction to case for dc 1.5 c/w r th(j-c) ac junction to case for 360 conduction angle (f = 50 hz) 1.1 c/w figure 1. max. rms power dissipation versus on-state rms current (f = 50hz). (curves limited by (di/dt)c) figure 2. max. rms power dissipation and max. allowable temperatures (t amb and t case ) for various r th p(w) i (a) t(rms) = 180 = 90 = 120 40 30 20 10 0 0 5 10 15 20 25 = 30 = 60 180 t (c) amb 0 20 40 60 80 100 120 140 125 85 95 115 105 p(w) t (c ) case 40 30 20 10 0 r = 1.5c/w th r = 1c/w th r = 0.5c/w th r = 0c/w th rth case to ambient - figure 3. on-state rms current versus case temperature figure 4. relative variation of thermal impedance versus pulse duration i (a) t(rms) 30 25 20 15 10 5 0 025 75 50 100 125 t (c) case = 180 k=[z /r th(j-c) th(j-c) ] t (s) p z th(j-c) z th(j-a) 1.00 0.10 0.01 0.0 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3
characteristics tpdvxx25 4/7 doc id 18268 rev 2 figure 9. safe turn-off operating area figure 5. relative variation of gate trigger current and holding current versus junction temperature figure 6. non repetitive surge peak on-state current versus number of cycles i,i,i[t] / gt h l j i ,i ,i [t =25c] gt h l j t (c) j i gt i h & i l 2.5 2 1.5 1 0.5 0 -20 -30 -40 0 10 -10 20 40 30 50 60 70 80 90 100 110 120 130 i (a) tsm number of cycles t initial=25c j 200 150 100 50 0 1 10 100 1000 one cycle t = 20 ms figure 7. non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding values of i 2 t figure 8. on-state characteristics (maximum values) i (a), i t (a s) tsm 22 t (ms) p i t 2 i tsm t initial = 25c j 100 1000 1 2 510 i (a) tm 1000 100 10 1 123456 v (v) tm v =1.1v r =19m t max.: j t0 d t j =max t =25c j (dv/dt)c(v/s) 1000 100 10 1 (di/dt)c(a/ms) t initial = 25c j 1 10 100
tpdvxx25 package information doc id 18268 rev 2 5/7 2 package information epoxy meets ul94,v0 cooling method: c (by conduction) recommended torque value: 0.9 to 1.2 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. top3 insulated dimensions ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 1.45 1.55 0.057 0.061 c 14.35 15.60 0.565 0.614 d 0.5 0.7 0.020 0.028 e 2.7 2.9 0.106 0.114 f 15.8 16.5 0.622 0.650 g 20.4 21.1 0.815 0.831 h 15.1 15.5 0.594 0.610 j 5.4 5.65 0.213 0.222 k 3.4 3.65 0.134 0.144 ?l 4.08 4.17 0.161 0.164 p 1.20 1.40 0.047 0.055 r 4.60 typ. 0.181 typ. r h k g f e d b a c jj p ?l
ordering information tpdvxx25 6/7 doc id 18268 rev 2 3 ordering information 4 revision history table 7. ordering information order code marking package we ight base qty delivery mode tpdv825rg tpdv825 top3 insulated 4.5 g 30 tube tpdv1025rg tpdv1025 TPDV1225rg TPDV1225 table 8. document revision history date revision changes 30-mar-2011 1 first issue. 13-jan-2012 2 updated di/dt in ta bl e 2 and added v to and r d to ta bl e 3 .
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